0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features low c ob .c ob =2.0pf (typ.) absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 7v collector current i c 0.15 a collector power dissipation p c 0.2 w junction temperature tj 150 storage temperature t stg -55 to +150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v cbo i c =50a 60 v collector-emitter breakdown voltage v ceo i c =1ma 50 v emitter-base breakdown voltage v ebo i e =50a 7 v collector cutoff current i cbo v cb =60v 0.1 a emitter cutoff current i ebo v eb =7v 0.1 a dc current gain h fe v ce =6v, i c =1ma 120 560 collector-emitter saturation voltage v ce(sat) i c /i b =50ma/5ma 0.4 v collector output capacitance c ob v ce =12v, i e =0a, f=1mhz 2 3.5 pf transition frequency f t v ce =12v, i e =-2ma, f=100mhz 180 mhz h fe classif ication ma rking bq br bs rank q r s h fe 120 270 180 390 270 560 sales@twtysemi.com 1 of 3 http://www.twtysemi.com 2SC2412K product specification 4008-318-123
fig.1 grounded emitter propagation characteristics 0 0.1 0.2 0.5 2 20 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 5 10 ta = 100 c v ce =6v collector current : i c (ma) base to emitter voltage : v be (v) 25 c ? 55 c 0 0 2 8 10 4 8 12 16 4 6 20 i b =0a ta=25 c collector current : i c (ma) collector to emitter voltage : v ce (v) 3 a 6 a 9 a 12 a 15 a 18 a 21 a 24 a 27 a 30 a fig.2 grounded emitter output characteristics 0.2 20 10 0.5 1 2 5 10 20 50 100 200 50 100 200 500 v ce =5v 3v 1v ta=25 c fig.3 dc current gain vs. collector current dc current gain : h fe collector current : i c (ma) fig. 4 collector-emitter saturation voltage vs. collector current 0.2 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =50 20 10 ta=25 c fig.5 collector-emitter saturation voltage vs. collector current 0.2 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =10 ta=100 c 25 c ? 55 c fig.6 gain bandwidth product vs. emitter current 50 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 100 200 500 ta=25 c v ce =6v emitter current : i e (ma) transition frequency : f t (mhz) typical characteristics sales@twtysemi.com 2 of 3 http://www.twtysemi.com 2SC2412K product specification 4008-318-123
fig.7 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob ( pf) emitter input capacitance : cib ( pf) 0.2 0.5 1 2 5 10 20 50 1 2 5 10 20 cob ta=25 c f = 1mhz i e =0a i c =0a cib fig.8 base-collector time constant vs. emitter current ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 base collector time constant : ccr bb' (ps) emitter current : i e (ma) 10 20 50 100 200 ta=25 c f=32mh z v cb =6v 2SC2412K sales@twtysemi.com 3 of 3 http://www.twtysemi.com product specification 4008-318-123
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